MMBT8050D 数据手册
数据手册规格
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数据手册名称
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MMBT8050D
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文件大小
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85.01
千字节
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文件类型
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pdf
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页数
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4
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技术规格
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RoHS:
true
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Category:
Triode/MOS Tube/Transistor/Bipolar Transistors - BJT
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Datasheet:
PJSEMI MMBT8050D
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Transistor Type:
NPN
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Operating Temperature:
+150°C@(Tj)
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Collector Current (Ic):
600mA
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Power Dissipation (Pd):
350mW
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Transition Frequency (fT):
100MHz
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DC Current Gain (hFE@Ic,Vce):
160@100mA,1V
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Collector Cut-Off Current (Icbo):
100nA
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Collector-Emitter Breakdown Voltage (Vceo):
25V
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Collector-Emitter Saturation Voltage (VCE(sat)@Ic,Ib):
500mV@500mA,50mA
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Package:
SOT-23
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Manufacturer:
PJSEMI
